SGT120R65AL – 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor

The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.

  • Enhancement mode normally off transistor
  • Very high switching speed
  • High power management capability
  • Extremely low capacitances
  • Kelvin source pad for optimum gate driving
  • Zero reverse recovery charge

more information:

Source link

We will be happy to hear your thoughts

Leave a reply

Enable registration in settings - general
Shopping cart